Optical sub-assembly having a thermo-electric cooler and an optical transceiver using the optical sub-assembly

ABSTRACT

The present invention relates to an optical transceiver that installs an optical transmitting assembly and an optical receiving assembly both are compact, inexpensive, and capable of operating at a high speed. The optical transmitting assembly of the present invention provides the metal bottom that installs the thermoelectric cooler thereon and the semiconductor optical device is mounted, via the insulating substrate, on the thermoelectric cooler. The first and second multi-layered ceramic substrates are provided to surround the thermoelectric cooler. The DC signal or the low-frequency signal for the thermoelectric cooler and the semiconductor optical device is supplied through the first ceramic substrate, while the high frequency signal for the semiconductor device, with the complementary signal having the opposite phase to the high frequency signal, is provided to the semiconductor device through the inner layer of the second ceramic substrate and the insulating substrate. The semiconductor light-receiving device, which monitors light emitted from the semiconductor light-emitting device, is mounted on the top layer of the second ceramic substrate. Thus, the transmission path for the high frequency signal from the drive circuit installed outside of the transmitting assembly to the light-emitting device becomes substantially linear.

FIELD OF THE INVENTION

The present invention relates to an optical transmitting device, which is applied to a high-speed (10 Gbps for example) optical communication system, having a small-sized housing and including a function to control a temperature thereof.

RELATED PRIOR ART

In recent optical communication system, it is required to realize an optical transceiver applicable to a high-speed optical signal and having a small-sized housing. For example, a transceiver complying a XFP industrial standard provides an optical receptacle that may receive a duplicate LC-connector. A pitch between two fibers is set to be 6.25 mm. The width and the height of the XFP transceiver are ruled to 18.35 mm and 8.5 mm, respectively. Therefore, the XFP transceiver requires an optical transmitting device and an optical receiving device capable of being installed therein. Permissible dimensions for these optical devices are about 6 mm in width×6 mm in height as shown in FIG. 2. The optical transmission device used in a high-speed or a long reach applications generally provides a thermoelectric cooler to prevent degradation of the transmission quality due to the temperature dependence of the optical transmitting element.

However, a butterfly device providing 14 lead pins, which is a de facto standard for the optical transmitting device with the thermoelectric cooler, has a large package size of 13×9×21 mm (width×height×length). Therefore, the transmitting device with such butterfly package can not be applicable to a small-sized transceiver having XFP standard.

Accordingly, the optical transmitting device having a thermoelectric cooler in a small-sized package is strongly expected. Further, the optical transmitting device is required to have a high-frequency characteristic capable of responding the high-speed transmission such as 10 Gbps.

The optical transmitting device for the high-speed transmission of 10 Gbps is considered to be;

-   (1) a direct modulation type; or -   (2) an external modulation type.     In the direct modulation type, a modulation signal is directly     applied to a DFB-LD (Distributed Feed Back Laser Diode). While in     the external modulation type, the DFB-LD emits light in a CW mode     and the modulation signal is applied to an optical modulator. In the     latter type, an EA-DFB chip, in which the DFB-LD and the optical     modulator of an electro-absorption type (EA-modulator) are     monolithically integrated, is used as a light-emitting device in     general.     Example of type (1) Japanese patent published by 06-318763[1]

This patent has disclosed a resistor 11 for impedance matching configured in series to the DFB-LD. An output impedance of the laser driver is generally designed to be 50 Ω, and the signal line, for instance a micro-strip line, in the optical transmitting device provides 50 Ω for the line impedance. On the other hand, the impedance of the DFB-LD itself is generally about 5 Ω, accordingly an additional resistor with 45 Ω impedance is preferably provided for driving the DFB-LD in high-speed.

The condition and the characteristic of the typical DFB-LD used in the high-speed application are 50 mA in average driving current and 1.2V in forward voltage, respectively. Under this condition, the DFB-LD generates heat of about 0.06 W. Moreover, the additional resistor of 45 Ω also generates heat of 0.11 W.

When the optical transmitting device having a small-sized package is designed, the thermoelectric cooler must be also miniaturized, which restricts endothermic amount by the thermoelectric cooler and a temperature difference ΔT, the thermoelectric cooler is able to compensate, becomes small (refer to JP 06-318673 paragraph [0010]). The JP 06-318673 has disclosed that, by disposing the impedance matching resistor on the table 8 outside of the thermoelectric cooler, the maximum endothermic amount may be reduced.

However, in such configuration, the signal line on the table and the LD on the thermoelectric cooler must be connected with a bonding wire, which is equivalent to insert an inductance element due to the bonding wire therebetween and accordingly the inductive element degrades quality of the high-speed signal. To suppress the increase of the maximum endothermic amount of the thermoelectric cooler due to the heat transfer from the outside table, a gap must be provided therebetween. Therefore, a length of the bonding wire that connects the resistor on the table to the LD on the thermoelectric cooler is necessary, which causes the degradation of the signal quality especially in the high-speed transmission about 10 Gbps.

Further, in the aforementioned patent [1], the LD is mounted on the thermoelectric cooler via a metal base 3. The metal base 3 stabilizes the ground level. Although the patent [1] has not suggest concrete material and shape of the metal base and the lens, another reference listed below have disclosed that a lens barrel in which a lens is secured is fixed by the laser welding after the optical alignment is performed, and the lens barrel is preferably made of stainless steel, kovar or copper-tungsten as a material suitable to the laser welding.

[2] Japanese patent published by 05-323165

[3] Japanese patent published by 11-126946

[4] Japanese patent published by 2000-277843

[5] Japanese patent published by 2003-198033

[6] Japanese patent published by 2003-215406

Generally, the endothermic surface (the upper surface) of the thermoelectric cooler is made of insulating material such as alumina or aluminum nitride (AlN). When the base is placed on and fixed to the endothermic surface, it is preferable that the material of the base has a similar thermal expansion co-efficient to that of the insulating material of the endothermic surface in order to thermal stress caused between the base and the endothermic surface. On the other hand, from the viewpoint of reducing the heat resistance between the LD as heat source and the endothermic surface and for suppressing the required endothermic amount, the base is made of metal having a good thermal conductivity. From reasons above mentioned, the base is generally made of copper tungsten (CuW). However, such metal of stainless steel, kovar and CuW has a relatively large heat capacity per unit volume.

Assuming the heat capacity of the material placed on the thermoelectric cooler is C [J/° C.], and operating the optical transmitting device by activating the thermoelectric cooler under the environmental temperature of 75° C. When the temperature of the base is set to be 25° C. within 30 seconds, heat quantity calculated by the next equation must be absorbed by the thermoelectric cooler; Qt [W]=C (75−25)/30. Therefore, to apply the material having large heat capacity such as stainless steel, kovar and CuW to devices placed on the thermoelectric cooler makes it hard to reduce the required endothermic amount of the thermoelectric cooler.

The Japanese patent published by 2003-168838[7] has disclosed a method for fixing the lens to the base 9 without using the metallic lens barrel. Such configuration makes it possible not only to shorten the height of the transmitting device but also, as a result of the shortening, to reduce the heat capacity of the elements relating to the fixing of the lens. However, JP 2003-168838 did not take the application of the thermoelectric cooler into account, and accordingly no records relating to the heat capacity is found. Further, JP 2003-168838 has used the base made of CuW, thereby leaving the subject of the heat capacity.

Example of Type (2)

The Japanese patent by 09-090302 has disclosed an example that uses a EA-DFB semiconductor chip. The EA-DFB chip is mounted on the sub-mount 9, and the sub-mount 9 is placed on a carrier 20. A dielectric body made of aluminum oxide is disposed immediately close to the sub-mount 9, on the dielectric body is provided a strip line 3. A substrate made of aluminum oxide is also disposed adjacent to the sub-mount 9, and a resistor 5 for the termination is formed on the aluminum substrate so as to make in parallel to the EA portion.

By the thus arranged termination resistor matches the output impedance of the EA driver circuit to the line impedance of the strip line, thereby preventing the unexpected reflection of the transmitted signal and accordingly providing the signal to the EA portion with good quality.

Generally, a supply current to the EA portion of the EA-DFB chip reaches about 100 mA at maximum. The forward voltage of the DFB portion is about 1.5 V, therefore, heat of about 0.15 W is generated only by the DFB portion. Moreover, since an average voltage, a sum of the bias voltage and a half of the swing voltage, is about 1.5 V, the termination resistor generates heat about 0.045 W assuming the resistance thereof is 50 Ω. Still further, it is well known that, in the EA portion, the current due to the optical absorption flows by about 20 mA, accordingly heat is generated about 0.03 W. Thus, using the EA-DFB device, heat greater than the aforementioned case [1] is generated, thereby bringing further difficulty to miniaturize the thermoelectric cooler.

The Japanese patent 09-090302 has no concrete records relating to the thermoelectric cooler, only mentioned that the carrier is made of conductive material. However, considering the thermal stress between aluminum oxide or aluminum nitride (AlN), which is generally used for the upper surface of the thermoelectric cooler, and simultaneously the carrier must be the material with high-thermal conductivity, it may be speculated that the carrier made of CuW is used, which brings a restriction to reduce the heat capacity.

The Japanese patent 09-090302 has not mentioned of the lens assembly. Widely known technique disclosed in aforementioned prior art from [2] to [6] is supposed to be used in the reference [8], which also restricts to reduce the heat capacity.

The Japanese patent 2001-257412[9] has a arrangement that a sub-mount 32 made of aluminum nitride (AlN) is placed on the carrier made of copper tungsten (CuW) provided on the thermoelectric cooler (the Peltier cooler). On the sub-mount 32 is formed a micro strip line and is mounted the EA-DFB semiconductor chip. The ground electrode on the surface of the sub-mount is electrically connected and grounded, through the via-hole, to the electrode on the back surface thereof and the carrier 33. This prior art also provides a termination resistor and a dumping resistor on the sub-mount, therefore it is reasonable to speculate that more heat is generated than the arrangement according to the previous prior art of Japanese patent 09-090302. Moreover, although the Japanese patent 2001-257412 includes a non-spherical lens 53, no records relating to the mechanism of installing thereof has been found. Therefore, it is reasonable to suppose that the similar mechanism is provided to the prior arts listed above. Accordingly, the Japanese patent 2001-257412 restricts to reduce the heat capacity.

Thus, as recognized from the prior arts, there are various subject to be solved for realizing the optical transmitting device that includes the thermoelectric cooler in the small sized package, and accordingly, one object of the present invention is to provide a solution for such subjects.

BRIEF DESCRIPTION OF DRAWINGS

FIG. 1 is a perspective view of the optical transmitting device according to the present invention;

FIG. 2 is a perspective view showing an interior structure of the optical transceiver installing the optical transmitting device of the present invention;

FIG. 3A is a partially cutaway showing the arrangement before installing components therein, and FIG. 3B is a cross sectional view of the optical transmitting device;

FIG. 4A is a partially cutaway showing the arrangement after installing components therein, FIG. 4B is a cross sectional view and FIG. 4C is an exploded view of the multi-layered ceramic substrate;

FIG. 5A is an exploded view of the carrier, and FIG. 5B and FIG. 5C show the construction of the carrier;

FIG. 6A shows a wiring of the bonding-wire and FIG. 6B shows a method of the wire-bonding;

FIG. 7A to FIG. 7E show a latter half of the construction of the carrier;

FIG. 8A shows the mounting of the PD carrier, FIG. 8B is a perspective view of the PD carrier, FIG. 8C is a cross sectional view of the region of the ceramic substrate where the PD carrier is mounted thereon, and FIG. 8D shows the construction of the ceramic substrate to where the PD carrier is mounted;

FIG. 9A is a partially cutaway of the conventional optical transmitting device, FIG. 9C is a perspective view of the carrier assembly, FIG. 9B is a partially cutaway of the optical transmitting device according to the present invention, and FIG. 9D is a perspective view of the carrier assembly of the present invention; and

FIG. 10A is a cross sectional view of the present optical transmitting device, and FIG. 10B and FIG. 10C are partially expanded views showing the multi-layered ceramic substrate.

EMBODIMENTS

FIG. 1 shows a perspective view of a optical transmitting device of the present invention.

The optical transmission device includes a package, the first side of which provides a nose capable of mating with a ferrule being included in an optical plug. The second side opposite to the first side provides a plurality of lead pins. The lead pin transmits a high-frequency modulation signal to the light-emitting element within the optical transmitting device. The third side intersecting to the first and second sides also provides a plurality of lead pins. These lead pins provided in the third side supply power to the thermoelectric cooler, output a monitored signal from the photodiode, input a bias current to the DFB-LD, and input/output a low-frequency or direct current (DC) signal.

FIG. 2 shows an internal arrangement of the optical transceiver installing the optical transmitting device of the present invention. In FIG. 2, a portion of the outer wall is cut out to appear the inside arrangement thereof.

In the small-sized optical transceiver like a type of XFP, the optical receptacle, the optical transmitting device or the optical receiving device, and the substrate are disposed in this order along the longitudinal direction because of its small width. On the portion of the substrate is arranged the driving circuit for the optical transmitting device. In this arrangement, it is preferable to dispose lead pins, through which the high frequency modulation signal is transmitted, in the second side of the package, whereby the driving circuit and the optical transmitting device can be connected in linear and in the shortest length, and accordingly the degradation of the high frequency modulation signal may be reduced to a minimum.

FIG. 3 shows a structure of the package of the optical transmitting module of the present invention.

The package includes a bottom plate and a side wall. The bottom plate is made of material having good thermal conductivity such as copper tungsten (CuW). The side wall and the bottom plate are brazed and tightly sealed. The side wall, for instance, consists of multi-layered ceramics made of alumina and metal, for instance kovar. Not only on the outer surface but also the inner of the multi-layered ceramics are formed wiring patterns, which electrically connect the optical or the electrical components installed within the package to the lead pins disposed on the side of the package.

On the top of the side wall is brazed the seal ring made of kovar. On the seal ring, a rid (not shown in FIG. 3) made of kovar is attached by the seam seal technique.

The side wall, which corresponds to the aforementioned first side, is made of kovar, and has a substantially circular opening with a window made of transparent material, for example sapphire, being air-tightly attached thereto.

The bottom plate of the package, the side wall made of kovar, the seal ring and the rid are electrically conducted with each other. Further, the outer surface of the multi-layered ceramic, except regions adjacent to the portion where the lead pin is secured, is metallized to electrically conduct to the bottom plate and the side wall. Further, as shown in FIG. 10, the lens barrel holding the second lens, the collar, and the periphery of the nose portion are made of metal and are electrically conducted to the side wall. Thus, the outer surfaces, except regions adjacent to the portion where the lead pin is secured, of the optical transmitting device have same electrical potential different to the signal ground in the present embodiment.

Generally, the housing of the optical transceiver is often grounded to the chassis, which is called as the frame ground and is isolated from the signal ground. By isolating the outer surface of the optical transmitting device from the signal ground, it becomes unnecessary to take the isolation therebetween into consideration when installing the optical transmitting device into the optical transceiver, thereby facilitating the design of the transceiver. Moreover, the nose portion of the optical transmitting device and the housing of the optical transceiver are connected with each other in the optical receptacle, which stabilizes the potential attributed to the outer surface of the optical transmitting device and effectively suppresses the electromagnetic noise radiated therefrom.

On the bottom of the optical transmitting device is installed the thermoelectric cooler. FIG. 4 shows an arrangement of the thermoelectric cooler and the bonding wire. The thermoelectric cooler has a configuration that a plurality of n-type Peltier elements and p-type Peltier elements are sandwiched by an upper substrate and a lower substrate. The lower substrate provides a first electrode and a second electrode. On the multi-layered substrate is also provided first and second electrodes, each corresponding to those provided on the lower substrate of the thermoelectric cooler and connected thereto by bonding wires. The first and second electrodes on the multi-layered substrate are connected to the lead pins disposed in the third wall via the wiring formed on the surface and in the intermediate layer of the multi-layered substrate. Supplying a current to the electrodes on the lower substrate from the lead pins, the thermoelectric cooler transports heat from the lower to the upper substrate or from the upper to the lower substrate thereof depending on the direction of the current supplied thereto.

When operating the thermoelectric cooler, the large current, such as 1.0 A at the maximum, may be necessary. In the case that the resistance of the wiring from the lead pin to the first and second electrodes of the lower substrate is large, such wiring may generate heat, namely, consume unexpected power. Moreover, such unexpected power consumption by the wiring simultaneously brings a large voltage drop, thereby requiring a driving circuit capable of outputting a large driving signal. Accordingly, an important subject may be caused that the power consumption of the optical transceiver becomes large. It is desired that the resistance of the wiring should be as small as possible. In the present embodiment, as shown in FIG. 4, the wiring between the first and second electrodes on the multi-layered ceramic substrate and the lead pins are realized by the wiring formed on the surface and that arranged in intermediate layer of the multi-layered substrate connected in parallel to each other. As a result of this design that the resistance should reduce as possible within a limited space, the resistance of the wiring can be lowered to 0.1 Ω in the total of both wirings to the first and second electrodes.

The upper and lower substrates of the thermoelectric cooler are made of insulating material such as alumina and aluminum nitride (AlN). The lower substrate has a layer metallized by gold, and is fixed to the bottom plate of the optical transmitting device with solder or resin.

The upper substrate also has a metallized layer, which is attached to the lower surface of the carrier with solder or resin.

The carrier is made of material with good thermal conductivity. Typical example is aluminum nitride (AlN). On the lower surface of the carrier is provided a metalized layer by gold (Au), which is utilized to the bonding with the upper substrate of the thermoelectric cooler.

The carrier includes a first mounting surface and a second mounting surface. The first mounting surface provides a metal wiring pattern, and mounts the EA-DFB chip, a temperature sensor (for example a thermistor) and capacitor thereon. On the nearly whole surface of the metallic wiring pattern is coated with gold (Au), which shows good solderability. Beneath the gold layer is material with good adhesion to aluminum nitride (AlN), titanium (Ti) is a typical example of such material. Additional metal layer may be inserted between the gold (Au) and the titanium (Ti). These layers may be deposited by a thin-film forming process, the evaporation process is popular, to a total thickness of about 2 μm with scattering of sub-micron meters. The EA-DFB chip is installed on the gold layer via tin-gold (AuSn) eutectic metal, thickness of which is about 3 μm with anomalies of also sub-micron meters. On the lower surface of the EA-DFB chip is provided gold (Au) layer. Thus, the EA-DFB chip is fixed to the tin-gold (AuSn) layer by scrubbing and pressing thereto at about 300° C.

Thus, to mount the EA-DFB chip on the metal layer with small anomalies in thickness performs a quite important role to stabilize the optical coupling. Details of the optical coupling will be described later. On the surface of the carrier is provided ground patterns and a signal line such that the signal line is sandwiched by the ground patterns.

The carrier, as shown in FIG. 5A, has a ground layer in its internal layer. FIG. 5A is a schematic view showing the surface and internal layer of the carrier. The ground in the top layer and that in the internal layer are connected by a via-hole, thereby stabilizing the ground potential. When further stabilized ground is required, a plurality of internal ground layers connected by via holes with each other may be prepared.

The signal line on the top layer is surrounded by the ground patterns on the top layer and the ground layer in the intermediate layer, which configures a grounded co-planar line. A width of the signal line and gaps to the ground pattern nearest to the signal line are so designed that the characteristic impedance of the signal line becomes 50 Ω, because the output impedance of the driving circuit is designed 50 Ω in general. On the end of the signal line, a termination resistor is formed so as to be connected in parallel to the EA portion of the EA-DFB chip. In the present embodiment, although a thin film resistor is used, a resistor with chip shape may be installed.

Present embodiment further provides a pad for an anti-phase signal with a termination resistor disposed between the pad and the ground. This configuration enables to drive the EA portion of the EA-DFB chip differentially by providing the anti-phase signal to the pad. The anti-phase signal has an opposite phase to that provided to the signal line. The differential drive shows an advantage to further stabilize the ground potential and to obtain an optical signal with good waveform. Moreover, the differential drive also reduces the electromagnetic induced noise. However, the present invention is not restricted to the differential drive, the single-phase drive may be applicable depending on the required waveform and the level of the electromagnetic induced noise. In the case of the single-phase drive, the region in FIG. 5, where the termination resistor and the pad are formed, is used as the signal ground.

The signal line extends substantially along the optical axis of the EA-DFB chip. As shown in FIG. 6A, on the top surface of the multi-layered ceramic substrate is provided electrode pads connected to the signal ground and signal line on the first mounting surface with bonding wire. These electrode pads are connected to lead pins disposed in the second side wall via wiring on the top layer and also in the intermediate layer of the multi-layered ceramic substrate. As previously describing, the lead pins passing the high-frequency signal is disposed in the second wall of the optical transmitting device, which is due to the consideration that the wiring to the driver should be shortened and in linear. In the optical transmission device, the wiring from the lead pin disposed in the second wall to the EA-DFB chip is designed under the same concept as that outside the transmitting device.

Moreover, as shown in FIG. 6A, bonding wires other than those for the signal line and the signal ground are also wired substantially in parallel to the optical axis of the EA-DFB chip. In the wire-bonding process, as shown in FIG. 6B, the bonding wire is let out from the capillary, which has a conical head, and is connected by pressing the tip of the capillary as applying the ultrasonic wave thereto. Therefore, a space around the point to where the wire-bonding is performed is necessary to enable the capillary to approach, which prevents the side wall from bringing close enough. Therefore, to wire the bonding wire in substantially parallel to the optical axis is effective to reduce the width of the package, especially for the XFP transceiver having a severe restriction in its with. Two bonding wires extending from the upper surface of the EA-DFB chip are wired in a direction intersecting to the optical axis. However, these two bonding-wires are processed before the carrier is installed into the package, and accordingly does not become a reason to restrict the width.

The signal line on the first mounting surface extends to the neighborhood of the EA-DFB chip, which is also mounted on the first mounting surface. The thickness of the EA-DFB chip is typically about 100 μm. Therefore, the gap between the end of the signal line and the electrode provided on the upper surface of the EA-DFB chip can be wired with a comparatively short wire, thereby preventing the degradation of the transmitted signal due to the parasitic inductance of the bonding wire.

On the first mounting surface is provided a first and second pads not connected to the signal line or the signal ground. From FIG. 7A to FIG. 7E shows a portion of the manufacturing process of the optical transmitting device according to the present invention, which is a process for mounting components of the carrier. As referring to these figures, the function of the first and second pads will be described.

(1) Die-bonding: The EA-DFB chip and a capacitance are mounted on the first mounting surface. The EA-DFB chip is mounted on the first mounting surface, as previously described, by interposing the tin-gold (AuSn) layer prepared in advance to the die-bonding. The capacitance may be mounted in similar method to the EA-DFB chip, or may be mounted by adding another tin-gold pellet thereto or by using another material such as conductive resin.

(2) Wire-bonding: The wire-bonding is performed between the upper electrode of the EA portion and the signal line, between the upper electrode of the DFB portion and the second pad via the upper surface of the capacitor, and between the signal line and the first pad.

(3) DC testing: Supplying a voltage to the EA portion and a current to the DFB portion by probing the first, second and ground pads 10. Light emitted from the EA-DFB chip is monitored by the light-receiving device, and checking whether the specified optical power is output from the EA-DFB chip under the predetermined voltage and current supplied thereto.

(4) Burn-in testing: Burn-in storage in a high temperature (typically 85° C.) and in a long time (for example, 48 hours) is performed as supplying a voltage and a current to the EA-DFB chip by probing in the method similar to the DC-testing. After the burn-in storage, the optical output power of the EA-DFB chip is checked, similarly to the DC testing, by supplying the predetermined voltage and current thereto. Comparing the obtained data of the optical output, the voltage and the current before and after the burn-in storage, when the change of the obtained data exceeds the specific range, the EA-DFB chip is judged to be a inferior chip with the initial failure mode.

(5) Dynamic testing: After the bonding-wire connected the signal line to the first pad is removed, a high-frequency signal is applied to the end of the signal line 11 by setting the micro-wave probe to the signal line and the end of the ground pads 12 and 13 provided on the both sides of the signal line 11, while the DFB portion is provided a DC current by probing the second pad. Under this setup, the light emitted from the EA-DFB chip is guided to the optical fiber. By checking the light, for example the waveform thereof, transmitted through the optical fiber, it is judged whether the EA-DFB chip under testing is able to use in the high-speed and the long-distance application.

From the processing thus preformed, the EA-DFB chip may be checked before installing the carrier, on which the EA-DFB chip is mounted, into the package. Further, different to the Japanese patent published by 10-275957, additional soldering and removing solder are not necessary, which simultaneously reduces a cost for the testing of the EA-DFB chip and that of the optical transmitting device.

In the process of the dynamic testing described above, feeding the high frequency signal to the EA portion and the ground by probing the end of the lines, which have comparatively small areas, is to provide the high-frequency signal to the EA-DFB chip with good waveforms without inserting parasitic inductance and capacitance in the signal and ground lines. The micro-wave prove has an arrangement of ground-signal-ground patterns, the signal line of which has a specific impedance. By directly coming in contact with the end of the signal 11 and ground lines 12, 13 on the both sides of the signal lines 11, a loss of the micro wave signal to be transmitted can be reduced to the minimum.

On the other hand, only the DC bias is necessary to be applied to the EA-DFB chip in the DC testing and the burn-in testing, the pads with comparatively wide area can be utilized. Particularly, since the burn-in testing takes long time to perform the process, a batch testing in which a plurality of carriers, for example a hundred of carriers, is to be tested in one time is preferable. Therefore, the pads with relatively wide area are recommended to ease the positional accuracy between the probe and the pad.

The carrier, thus testing and selecting, further mounts the temperature sensor (for example a thermistor) thereon as shown in FIG. 7E. The temperature sensor is disposed so as to stride over the first pad and the ground pad 10. Accordingly, the first pad functions as the ground after mounting the temperature sensor, whereby the impedance-matched signal line may be extended close to the light-emitting device. Besides, to convert the first pad prepared for the probing thereon into the ground pattern may be helpful to avoid the carrier from enlarging.

As shown in FIG. 4 and FIG. 5, or previously described, the carrier has the second mounting surface where the lens is mounted thereon. The lens made of glass is fixed directly, without any lens barrel, to the second mounting surface with resin, such as organic adhesive. The lens has a similar mounting surface disclosed in Japanese patent 2003-168838, which is the seventh reference previously mentioned. The mounting surface of the non-spherical lens of the present embodiment is formed by the glass molding or by machining from the cylindrical lens formed by the glass molding. An accuracy of +/−3 μm to +/−5 μm can be realized for the length between the mounting surface of the lens thus processed and the optical axis thereof. One of typical example for the organic adhesive is an adhesive curable with ultraviolet rays. By adjusting the viscosity of the adhesive, the thickness of the adhesive may be thinned to a few μm with dispersion of an equal amount or less. Thus, by removing the lens barrel, the height of the light-transmitting device may be lowered, and the volume and the heat capacity thereof may be reduced. The spherical lens, instead of the non-spherical lens above mentioned, may be applicable when the required optical coupling is not so severe. In the case of taking the spherical lens, it is preferable to provide the mounting surface on the lens.

The step between the first and second mounting surface on the carrier can be realized with an accuracy of about +/−5 μm to +/−10 μm. Further, the contact between the first mounting surface and the EA-DFB chip is preformed by the AuSn layer formed in advance thereto, and the deviation of the thickness of the AuSn layer, and that of the Au and the Ti layer beneath the AuSn layer are small. The optically active layer of the EA-DFB chip positions in close to the upper surface thereof, and the level of the upper surface of the EA-DFB chip from the bottom surface thereof can be controlled within +/−5 μm to +/−15 μm in its length.

Such carrier having the first and second mounting surfaces can be obtained by machining a portion of the insulating substrate on which the wiring is formed as shown in FIG. 5B. A modified process for forming the carrier is, as shown in FIG. 5C, that the first and second insulating substrates are stuck to each other. On the back surface of the first insulating substrate is provided the brazing metal, for example AuSn, AuGe, or AuSi, with a thickness of a few micron meter by the thin film forming process such as evaporation. The portion of the second substrate provides an Au film, which has a good wettability to the brazing metal. By putting the first substrate on the second one and treating them in a high temperature, the carrier with the first and second substrates attached to each other can be obtained. Since the brazing metal and the Au film are used for sticking two substrates, the deviation of these films' thickness can be suppressed within micron meter, whereby the step between the first and second mounting surfaces can be formed with fine accuracy.

In the present configuration that the first mounting surface mounts the EA-DFB chip and the second mounting surface mounts the lens thereon, the deviation between the active layer of the EA-DFB chip and the optical axis of the lens is about 20 μm at most, and as a result of such deviation, the degradation of the coupling loss between the EA-DFB chip and the optical fiber is reduced to be about 0.3 dB. Thus, the present invention realizes the superior optical coupling by the simple and the small sized arrangement.

Moreover, the components mounted on the thermoelectric cooler only includes, as a metallic material, the wiring on the surface and intermediate layers of the carrier, and the electrodes of the EA-DFB chip, the capacitor and the thermistor. No metals as a bulk form are mounted on the thermoelectric cooler. Therefore, the volume and the heat capacity of the components on the thermoelectric cooler may be reduced, which may also reduce the maximum endothermic amount required to the thermoelectric cooler, and enough capacity for the temperature in the practical use may be realized even in the small-sized thermoelectric cooler. The ground pattern is provided in the intermediate layer of the carrier, in stead of the metallic base providing the ground potential and regarded as an inevitable arrangement in the conventional transmitting module, so the high frequency performance can be attained. Further, the high frequency modulation signal is supplied from the signal line formed on the carrier and extended to immediately close to the EA-DFB chip. Therefore, it may be reduced that the degradation of the modulation signal due to the parasitic inductance of the bonding-wire connecting the signal line to the EA-DFB chip, thereby realizing the superior high frequency performance.

As shown in FIG. 8A, the optical transmitting device of the present invention further provides a photodiode (PD) for monitoring the optical output thereof. The PD is mounted on the PD carrier. The PD carrier has a wiring, and two electrodes in the bottom surface thereof for the anode and cathodes of the PD, respectively.

The signal line is connected to the line in the intermediate layer of the multi-layered ceramic substrate through the via-hole between the region where the PD carrier is mounted and the region facing to the carrier. The level of the intermediate layer **3 to which the lead pins disposed in the second side is positioned lower than the top layer **1 where the wiring is formed. Therefore, the bottom surface of the PD carrier may be directly disposed on the top layer **1.

As shown in FIG. 8C and FIG. 8D, the multi-layered ceramic substrate includes the top layer **1, the second layer **2, the third layer **3 and the fourth layer **4. The third layer **3 is the surface to which the lead pins disposed in the second wall is attached. The wiring on the top layer **1 is connected to the third layer **3 through via holes. Most of the second layer **2 and the fourth layer **4 are provided for the ground patter. In the region where the PD carrier mounts thereon, the signal line is surrounded all around by the ground pattern. According to the present configuration, the impedance discontinuity of the signal line is hard to occur even if the bottom surface of the PD carrier is directly mounted on the top layer **1.

As a result of the thus arrangement, the EA-DFB chip can be connected by the shortest and the linear signal line from the lead pins disposed in the second side of the package, and the monitoring PD may be mounted outside the carrier. Accordingly, the degradation of the high-frequency signal from the lead pin to the EA-DFB chip may be suppressed, and simultaneously the heat capacity of the component disposed on the carrier may be reduced.

Next, the function of the reducing the heat capacity will be described. FIG. 9A is an exploded view of the conventional carrier with dimensions thereof. The unit of the dimensions is mm. This carrier is assembled with the lens holder disclosed in the Japanese patent published by the number H05-323165. The assembly with the carrier is disposed on the thermoelectric cooler.

FIG. 9B is an assembly having the carrier of the present invention with the dimensions thereof.

The table 1, shown below, lists the specific heat, the specific gravity, and the heat capacity per unit volume of various materials generally used in the optical transmission device. The heat capacity per unit volume is the product of the specific heat and the specific gravity. TABLE 1 physical properties of materials ordinarily used in the optical transmitting device specific heat specific gravity heat capacity material [J/g/K] [g/mm³] [mJ/K/mm³] CuW(10% Cu) 0.1633 0.017 2.78 Stainless steal 0.45 0.0077 3.54 kovar 0.4395 0.0084 3.67 Glass 0.498 0.0037 1.84 AlN 0.67 0.0033 2.18 SiC 0.7284 0.0032 2.33

The present invention, comparing to the conventional arrangement,

-   (a) the PD carrier is mounted outside the carrier; -   (b) the carrier is made of only aluminum nitride (AlN), not     including any metallic material; and -   (c) due to the connection between the carrier and the lens being     performed by the resin material, both the carrier and the lens are     not necessary to include metal components, which reduce the volume     thereof.

Accordingly, the heat capacity of the carrier assembly is reduce from 311.8 mJ/° C. to 11.9 mJ/C. The table 2 shows the detail of the reduction. TABLE 2 Comparison of conventional device and the present invention volume heat capacity component material [mm³] [mJ/K] Conventional L-carrier CuW 42.50 118.2 kovar 5.58 20.5 Chip Carrier CuW 15.84 44.0 AlN 2.15 4.7 PD Carrier AlN 0.63 1.4 Lens Glass 1.05 2.0 Stainless Steal 34.18 121.1 Total 102.05 311.8 Invention Chip Carrier AlN 4.78 10.4 Lens Glass 0.82 1.5 Total 5.60 11.9

One case is considered that the optical transmitting device starts at ambient temperature of 70° C. and the surface temperature of the carrier detected by the thermistor is controlled to 30° C. Assuming the transition time up to the stable condition on the temperature is 30 seconds, the above case (a) requires the cooling capacity of 416 mW for the thermoelectric cooler. On the other hand, the case (b) only requires 16 mW for the cooling capacity. These values only show the endothermic amount necessary to cool the carrier assembly, not including that for the heat generated by supplying the current and the voltage to the EA-DFB chip.

Thus, in the present optical transmitting device, the heat capacity of the components disposed on the thermoelectric cooler may drastically reduce, and increase the margin for designing the thermoelectric cooler. Accordingly, the optical transmitting device with a small-sized package can be obtained.

FIG. 10 is a cross-sectional view of the optical transmitting device according to the present invention.

Light emitted from the EA-DFB chip, which is divergent beam, is converted by the first lens into roughly parallel beam. This parallel beam is converted again into the convergent beam. The convergent beam, after passing the optical isolator, enters into the optical fiber disposed in the nose portion. These optical arrangement realizes the optical coupling efficiency of about 2.0 dB.

The second lens is secured in the metal barrel. The optical alignment in a plane normal to the optical axis is done by sliding the end of the lens barrel on the end of the package, and is welded by the YAG laser after the optical alignment is performed.

There is a minute clearance, from 10 μm to 50 μm between the inner surface of the collar, to which the optical isolator is attached, and the outer surface of the lens barrel, whereby the collar enables to slide along a direction parallel to the optical axis (z-axis). The end surface of the collar comes in contact with the end of the nose portion, and the collar may slide along directions (xy-direction) intersecting to the optical axis, which performs the optical alignment. Due to the configuration of the collar and the nose portion, the optical alignment in all directions, namely, along the x, y, and z directions, can be performed and the fixing to each other by the laser welding also can be carried out.

The optical fiber is secured in the center of the capillary made of zirconia. One end surface of the capillary is obliquely polished, from 5° to 8° with respect to the surface perpendicular to the optical axis thereof, and the other end is spherically polished with the radius from 10 mm to 25 mm. The nose portion includes the rigid sleeve, one end of which receives the capillary. The ferrule attached to the tip of the optical fiber is inserted from the other end of the rigid sleeve, and comes in physically contact with the capillary. The split sleeve may be applicable instead of the rigid sleeve.

By the configuration thus described, the light emitted from the EA-DFB chip is suppressed to reflect back to the EA-DFB chip again. Depending on the performance of the optical isolator and the tolerance of the EA-DFB chip to the reflected light, the zirconia capillary may be eliminated.

Between the one end of the upper substrate and the one end of the lower substrate of the thermoelectric cooler is provided a gap Δ α. By this configuration, the upper substrate does not touch to the side of the multi-layered ceramic substrate even the edge of the lower substrate touches to the side of the ceramic substrate when the thermoelectric cooler is installed on the bottom plate of the package. Further, when the carrier is soldered onto the upper substrate of the thermoelectric cooler, excess solder is prevented from coming in contact with the side of the ceramic substrate by arranging the gap Δ α between the edges of the upper and lower substrate of the thermoelectric cooler. Accordingly, the inflow of head heat by the heat conduction from the side of the ceramic substrate to the upper substrate of the thermoelectric cooler can be reliably prevented, thereby avoiding the thermal overloading of the thermoelectric cooler.

Concentrating on the side of the multi-layered ceramic substrate, the topmost layer is projected by Δβ with respect to the lower layer thereof. By this arrangement, the carrier and the topmost layer may be wire-bonded with the shortest bonding-wire, which suppresses the degradation of the high frequency signal because the parasitic inductance attributed to the bonding-wire for the connection of the signal line is reduced.

In the embodiment thus described, the light-emitting semiconductor device is exemplified by the EA-DFB chip. However, the present invention may be also applicable to the FP-LD and DFB-LD that excludes the modulator. When the DFB-LD and the FP-LD are used, a dumping resistor is inserted in the signal line.

Further, the pig-tail type fiber may be applicable instead of the nose portion that receives the optical plug.

The aluminum nitride (AlN) is exemplified as the material of the carrier. However, other materials having a high thermal conductivity and a small heat capacity may be applicable. Silicon carbide (SiC) is one of those materials.

The embodiments thus described have an arrangement that two lenses are disposed between the light-emitting device and the nose portion. However, the present invention may accept one lens arrangement. In one lens arrangement, the lens is disposed on the second mounting surface of the carrier, and converts divergent light emitted from the light-emitting device into convergent light. 

1. A transmitting optical sub-assembly, comprising: a semiconductor light-emitting device for emitting light by providing a modulation signal; a thermoelectric cooler for controlling a temperature of said semiconductor light-emitting device; and an insulating carrier including a first mounting surface and an inner ground layer, said first mounting surface providing a first transmission line for transmitting said modulation signal, a first terminator connected to said first transmission line and a surface ground layer connected to said inner ground layer, wherein said carrier is mounted on said thermoelectric cooler and said semiconductor light-emitting device is mounted on said first mounting surface of said carrier.
 2. The transmitting optical sub-assembly according to claim 1, wherein said first terminator is connected in serial to said first transmission line.
 3. The transmitting optical sub-assembly according to claim 1, wherein said first terminator is connected between said first transmission line and said surface ground layer.
 4. The transmitting optical sub-assembly according to claim 1, wherein said first mounting surface of said insulating carrier further includes a second transmission line and a second terminator connected to said second transmission line, and wherein said second transmission line transmits another modulation signal having a phase opposite to a phase of said modulation signal.
 5. The transmitting optical sub-assembly according to claim 4, wherein a first distance from said light-emitting device to said first terminator is shorter than a second distance from said light-emitting device to said second terminator.
 6. The transmitting optical sub-assembly according to claim 5, further includes a multi-layered ceramic substrate for transmitting said modulation signal and said another modulation signal to said carrier, wherein a difference between said first distance and said second distance is compensated on said multi-layered ceramic substrate.
 7. The transmitting optical sub-assembly according to claim 4, wherein said first terminator is connected in serial to said first transmission line and said second terminator is connected in serial to said second transmission line.
 8. The transmitting optical sub-assembly according to claim 4, wherein said first terminator is connected between said first transmission line and said surface ground plane, and said second terminator is connected between said second transmission line and said surface ground plane.
 9. The transmitting optical sub-assembly according to claim 1, further comprises a package having a package ground, wherein said surface ground in said carrier is isolated from said package ground within said package.
 10. The transmitting optical sub-assembly according to claim 1, wherein said carrier is made of aluminum nitride.
 11. The transmitting optical sub-assembly according to claim 10, further provides a lens made of glass for collimating said light emitted from said light-emitting device, and said carrier further provides a second mounting surface for directly mounting said lens thereon without lens holder.
 12. The transmitting optical sub-assembly according to claim 11, wherein a level of said first mounting surface is higher than a level of said second mounting surface.
 13. The transmitting optical sub-assembly according to claim 1, wherein said light-emitting device comprises a semiconductor laser diode for generating light in a continuous wave by providing a bias current thereto through a bypass capacitor and a semiconductor optical modulator for modulating said light generated in said semiconductor laser diode by providing said modulation signal transmitted in said first transmission line.
 14. The transmitting optical sub-assembly according to claim 13, wherein said semiconductor laser diode is integrally formed with said semiconductor optical modulator.
 15. The transmitting optical sub-assembly according to claim 1, wherein said light-emitting device is a semiconductor laser diode, and said first terminator is connected in serial to said first transmission line.
 16. The transmitting optical sub-assembly according to claim 1, wherein said light-emitting device is a semiconductor laser diode having a first electrode and a second electrode, said first terminator is connected in serial to said first transmission line, and said carrier further includes a second transmission line and a second terminator connected in serial to said second transmission line, wherein said first electrode of said semiconductor laser diode is connected to said first terminator for receiving said modulation signal, and said second electrode of said semiconductor laser diode is connected to said second terminator for receiving another modulation signal having a phase opposite to a phase of said modulation signal. 